? 2018 ixys corporation, all rights reserved ds99564h(5/18) n-channel enhancement mode IXTP50N20PM v dss = 200v i d25 = 50a r ds(on) ? ? ? ? ? 60m ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = ? 20v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 150 ? c 250 ? a r ds(on) v gs = 10v, i d = 25a, note 1 60 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 175 ? c 200 v v dgr t j = 25 ? c to 175 ? c, r gs = 1m ? 200 v v gss continuous ? 20 v v gsm transient ? 30 v i d25 t c = 25 ? c, limited by t jm 50 a i dm t c = 25 ? c, pulse width limited by t jm 120 a i a t c = 25 ? c50a e as t c = 25 ? c1j dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 10 v/ns p d t c = 25 ? c90w t j -55 ... +175 ? c t jm 175 ? c t stg -55 ... +175 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in weight 3 g (electrically isolated tab) polar tm power mosfet g = gate d = drain s = source overmolded to-220 g d s isolated tab features ? plastic overmolded tab for electrical isolation ? international standard package ? avalanche rated ? fast intrinsic diode ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switched-mode and resonant-mode power supplies ? dc-dc converters ? ac and dc motor drives ? robotics and servo controls ? battery chargers ? uninterrupted power supplies ? high speed power swicthing applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTP50N20PM ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 terminals: 1 - gate 2 - drain 3 - source 1 2 3 overmolded to-220 (ixtp...m) note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 50 a i sm repetitive, pulse width limited by t jm 200 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 150 ns q rm 2 ????????????? c i f = 25a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 25a, note 1 12 23 s c iss 2720 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 490 pf c rss 105 pf t d(on) 26 ns t r 35 ns t d(off) 70 ns t f 30 ns q g(on) 70 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 17 nc q gd 37 nc r thjc 1.66 ? c/w r thcs 0.50 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 25a r g =10 ? (external)
? 2018 ixys corporation, all rights reserved IXTP50N20PM fig. 1. output characteristics @ t j = 25 o c 0 5 10 15 20 25 30 35 40 45 50 00.511.5 22.533.5 v ds - volts i d - amperes v gs = 10v 7v 8v 9v 6v fig. 3. output characteristics @ t j = 150 o c 0 5 10 15 20 25 30 35 40 45 50 012345678 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v 9v fig. 4. r ds(on) normalized to i d = 25a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 50a i d = 25a fig. 5. r ds(on) normalized to i d = 25a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 102030405060708090100 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c t j = 175 o c fig. 2. extended output characteristics @ t j = 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 7v 9v 6v 8v fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 345678910 v gs - volts i d - amperes - 40 o c v ds = 10v t j = 150 o c 25 o c
ixys reserves the right to change limits, test conditions, and dimensions. IXTP50N20PM ixys ref: t_50n20p(6e-722) 5-8-18-g fig. 7. transconductance 0 4 8 12 16 20 24 28 32 36 0 102030405060708090100110120 i d - amperes g f s - siemens 25 o c 150 o c t j = - 40 o c v ds = 10v fig. 8. forward voltage drop of intrinsic diode 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 25 o c t j = 150 o c fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v gs - volts v ds = 100v i d = 25a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 11. forward-bias safe operating area 1 10 100 1000 1 10 100 1,000 v ds - volts i d - amperes t j = 175 o c t c = 25 o c single pulse 1ms 100 s r ds( on ) limi t 10ms dc 25 s
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